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| Datasheet File OCR Text: |
| NTE2347 Silicon NPN Transistor General Purpose, Medium Power Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers. Absolute Maximum Ratings: Collector-Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector-Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation, Ptot TA +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W TC +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICES Test Conditions VCE = 150V, VBE = 0 VCE = 100V, VBE = 0 VCE = 100V, VBE = 0, TC = +150C Emitter Cutoff Current Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IEBO VCE(sat) VBE(sat) hFE fT CCBO ton ts tf VEB = 6V, IC = 0 IC = 5A, IB = 500mA, Note 1 IC = 5A, IB = 500mA, Note 1 IC = 2A, VCE = 2V, Note 1 IC = 2A, VCE = 2V, TC = -55C, Note 1 Transition Frequency Collector-Base Capacitance Turn-On Time Storage Time Fall Time IC = 500mA, VCE = 5V VCB = 10V, IE = 0, f = 1MHz VCC = 20V, IC = 500mA, IB1 = 500mA VCC = 20V, IC = 5A, IB1 = -IB2 = 500mA VCEO(sus) IC = 50mA, IB = 0, Note 1 Min - - - - 80 - - 40 15 50 - - - - Typ - - - - - - - - - - - - - - Max Unit 1 1 100 1 - 1 1.6 120 - - 80 0.35 0.35 0.3 MHz pF s s s mA A A mA V V V Note 1. Pulse Test: Pulse Duration = 300s, Duty Cycle = 1.5%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793) |
Price & Availability of NTE2347
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